Spatial localization of Si‐vacancy photoluminescent centers in a thin CVD nanodiamond film

Abstract

Abstract A nanosized island‐like diamond film containing silicon‐vacancy (SiV) centers was grown by microwave plasma CVD on Si substrate. The diamond film was characterized by scanning electron microscope, microRaman, and photoluminescence spectroscopies. Nonuniform spatial localization of the SiV photoluminescent centers with a density over 1/µm 2 in the photoemitting regions is found. Interfering factors hindering registration of emission from a single SiV center in thin CVD nanodiamond films are determined.