Concepedia

The evidence for interaction of the N-N pair with oxygen in Czochralski silicon

Ming Qi, S.S. Tan, Bo Zhu, Peijie Cai, Wen Gu, Xixiang Xu, Tian-En Shi, Duanlin Que, L. B. Li

Journal of Applied Physics · 1991 · 54 citations · 6 references

DOI

Concepts

Abstract

Evidence for interaction between the N-N pair and interstitial O in N-doped Czochralski silicon has been presented by studying the annealing behavior of the corresponding IR absorption bands.

References

6

Oxygen, carbon, hydrogen and nitrogen in crystalline silicon

J. C. Mikkelsen, S. J. Pearton, J. W. Corbett et al. · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) · 1986 · 308 citations

, , +17

Defects in electronic materials

Michael Stavola, S. J. Pearton, G. Davies · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) · 1988 · 258 citations

, , +17

Effects of nitrogen on dislocation behavior and mechanical strength in silicon crystals

Kôji Sumino, Ichiro Yonenaga, Masato Imai et al. · Journal of Applied Physics · 1983 · 167 citations

, , +17

Nitrogen-oxygen complexes in Czochralski-silicon

Peter Wagner, R. Oeder, W. Zulehner · Applied Physics A · 1988 · 77 citations

, , +10

Calibration curve for infrared spectrophotometry of nitrogen in silicon

Yoshiko Itoh, Tadashi Nozaki, T. Masui et al. · Applied Physics Letters · 1985 · 76 citations

, , +16