Publication | Closed Access
The evidence for interaction of the N-N pair with oxygen in Czochralski silicon
54
Citations
6
References
1991
Year
EngineeringChemistrySilicon On InsulatorN-n PairIi-vi SemiconductorNanoelectronicsSiliceneMaterials SciencePhysicsOxide ElectronicsCzochralski SiliconSemiconductor MaterialN-doped Czochralski SiliconQuantum ChemistrySolid-state PhysicNatural SciencesApplied PhysicsCondensed Matter PhysicsInterstitial O
Evidence for interaction between the N-N pair and interstitial O in N-doped Czochralski silicon has been presented by studying the annealing behavior of the corresponding IR absorption bands.
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