Optical analysis of InAs heterostructures grown by migration-enhanced epitaxy

Abstract

The authors have investigated the interface of InAs/GaSb and InAs/AlSb grown by migration-enhanced epitaxy by photoluminescence and Raman spectroscopy. The significant effects of interface bonds, InSb or GaAs (AlAs), on the luminescence as well as phonon spectra are discussed. The confined phonon modes in both systems, InAs/GaSb and InAs/AlSb, are also compared to study the characteristic properties of InAs heterostructure.