Monolithic strained-InGaAsP multiple-quantum-well lasers with integrated electroabsorption modulators for active mode locking

Abstract

Active mode locking by monolithic lasers with integrated electroabsorption modulators using strained-InGaAsP multiple quantum wells is described. The electroabsorption modulator acts as a short optical gate when a sinusoidal voltage is driven at a deep bias point. Pulse widths as short as 2 ps have been obtained at a repetition rate of 16.3 GHz for a 2.5-mm-long monolithic laser.