Gas source molecular beam epitaxy of alternated tensile / compressive strained GaInAsP multiple quantum wells emitting at 1.5 μm - Concepedia

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Gas source molecular beam epitaxy of alternated tensile / compressive strained GaInAsP multiple quantum wells emitting at 1.5 μm

25

Citations

6

References

1993

Year

J.-Y. Emery, C. Starck, Leon J. Goldstein, Anne Ponchet, A. Rocher

Journal of Crystal Growth

EngineeringPhysicsApplied PhysicsSemiconductor NanostructuresMolecular Beam EpitaxyCompound SemiconductorOptoelectronics

References

	Year	Citations

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