Over 10 Gb/s regenerators using monolithic ICs for lightwave communication systems

Abstract

The design and performance of repeater circuits based on Si and GaAs MESFET process technologies are described. Repeater circuits were designed and fabricated for around 10 Gb/s repeater systems using Si and GaAs IC processes. The Si ICs operated up to 9 Gb/s, and the GaAs ICs exceeded 10 Gb/s. It was verified that regenerative repeater systems using these ICs and optical amplifiers exhibit a stable operation at 10 Gb/s. The performance of the 10 Gb/s repeater using these monolithic ICs and photonic circuits is discussed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>