Publication | Closed Access
Microdosimetric Aspects of Proton-Induced Nuclear Reactions in Thin Layers of Silicon
45
Citations
17
References
1982
Year
EngineeringNuclear PhysicsMicrodosimetric AspectsSilicon On InsulatorIon ImplantationNuclear RecoilThin LayersNuclear InteractionsHigh-energy Nuclear ReactionPhysicsCosmic RaySemiconductor Device FabricationMicroelectronicsNuclear EngineeringSilicon DebuggingComputer Simulation ModelNatural SciencesApplied PhysicsProton-induced Nuclear Reactions
A computer simulation model which calculates the energy deposited within a small sensitive volume embedded in a larger volume as a result of nuclear interactions anywhere in the larger volume is outlined. The model is tested by comparison with the pulse-height spectra measured in silicon surface barrier detectors as a result of exposure to protons at different energies. The model is then used to provide physical insight into the role played by the nuclear recoil in localized energy deposition about a nuclear interaction.
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