The temperature dependent resistivity of dilute aluminium alloys

Abstract

A calculation of the temperature dependent resistivity rho T of aluminium in the dirty limit has been performed using a simple model Fermi surface. The values obtained for rho T are as large as those seen by Caplin (1970) and have a similar temperature dependence (T3.5). The basic cause of this behaviour is the temperature dependence of the electron-phonon relaxation time near the zone boundaries. In order to predict the relation between rho T and impurity concentration, a two band model has also been used, giving results for the deviation from Mathiessen's rule which are similar to Caplin's experimental values.