Publication | Closed Access
Saturation of the junction voltage in stripe-geometry (AlGa)As double-heterostructure junction lasers
128
Citations
13
References
1976
Year
Wide-bandgap SemiconductorPhotonicsElectrical EngineeringEngineeringPhysicsSemiconductor LasersOptical PropertiesJunction VoltageApplied PhysicsAluminum Gallium NitrideDouble-heterostructure Junction LasersMultilayer HeterostructuresVoltage SaturationObserved SaturationOptoelectronicsCategoryiii-v SemiconductorLaser Damage
Saturation of the junction voltage has been observed to occur at the onset of lasing in cw stripe-geometry (AlGa)As double-heterostructure junction lasers. Simultaneous measurements of the nonlasing but amplified spontaneous emission confirm that saturation of the optical gain and spontaneous emission accompany the voltage saturation as expected. With well-behaved lasers the observed saturation is maintained over currents to at least 50% above threshold. In other devices, a loss of saturation is commonly observed to occur simultaneously with a nonlinearity in the current dependence of the lasing emission.
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