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Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1−<i>x</i>−<i>y</i>Ge<i>x</i>C<i>y</i> alloy layers on Si (100)
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1995
Year
Materials ScienceSemiconductorsDefect-free Band-edge PhotoluminescenceEngineeringCrystalline DefectsOptoelectronic MaterialsApplied PhysicsDefect-related LuminescenceSemiconductor MaterialOptoelectronic DevicesBand Gap MeasurementBand Gap ShiftOptoelectronicsBand GapSemiconductor Nanostructures
Pseudomorphic Si1−x−yGexCy alloy layers on Si (100) with band-edge photoluminescence and without defect-related luminescence have been achieved. The photoluminescence was measured from 2 to 77 K and was used to make a direct measurement of the band gap shift as a function of strain reduction as C was added. Compared to the effect of just reducing Ge content, results show that as C is added, strain is reduced more efficiently than the band gap is increased. Furthermore, results imply that a fully strain-compensated Si1−x−yGexCy layer on Si (100) would have a band gap much less than that of Si, and suggest that initial C incorporation reduces the band gap of relaxed, unstrained Si1−x−yGexCy alloys.