Characteristics of a Zn0.7Mg0.3O∕ZnO heterostructure field-effect transistor grown on sapphire substrate by molecular-beam epitaxy

Abstract

Characterization of a Zn0.7Mg0.3O∕ZnO heterostructure field-effect transistor (HFET) is reported. The HFET was based on a Zn0.7Mg0.3O∕ZnO∕Zn0.7Mg0.3O single quantum well (SQW) grown on an a-plane sapphire substrate by molecular-beam epitaxy, and was fabricated by a conventional photolithography technique combined with dry etching. Room-temperature characteristic of the HFET was a n-channel depletion type with a transconductance of 0.70mS∕mm and a field-effect mobility of 140cm2∕Vs, in good agreement with the electron Hall mobility in SQW of 130cm2∕Vs. The on∕off ratio at VDS=3V was ∼800, which was limited by an insufficiently suppressed leakage current through the bottom Zn0.7Mg0.3O barrier.