Photoluminescence of CdSnP₂ Single Crystals in the Vicinity of the Fundamental Optical Edge

Abstract

The influence of chemical etching on the emission properties of undoped CdSnP 2 crystals has been studied. The appropriate treatment gives rise to integral strengthening of photoluminescence and redistribution of emissions in such a manner that the longest wavelength band disappears and the exciton line flames up. The shortest wavelength line at 1.243 eV with the 2 k T half-width has been observed successfully for the first time. The doublet structure observed near the fundamental optical edge was attributed to the free exciton and bound-to-shallow level state in CdSnP 2 .