2010 · 97 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyMicrowave Integrated CircuitsMixed-signal Integrated Circuit DesignPower AmplifiersRadio-frequency Integrated CircuitsCarrier InjectionCmos ReliabilityDielectric BreakdownHot Carrier InjectionHot-carrier DegradationPower Amplifier DesignRadio Frequency Power AmplifiersTime-dependent Dielectric Breakdown
A 53-to-68 GHz power amplifier with an 8-way combiner in standard 65 nm CMOS meets the wireless HDMI standard. Reliability is improved by solving the issues of time-dependent dielectric breakdown and hot-carrier-injection degradation. The PA output power is 18 dBm.
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TX and RX Front-Ends for 60GHz Band in 90nm Standard Bulk CMOS
Masahiro Tanomura, Yasuhiro Hamada, Shuya Kishimoto et al. · 2008 · 139 citations
A 60GHz-band 1V 11.5dBm power amplifier with 11% PAE in 65nm CMOS
Wei Liat Chan, Jeffrey R. Long, Marco Spirito et al. · 2009 · 104 citations
Yung-Nien Jen, Jeng‐Han Tsai, T. C. Huang et al. · IEEE Transactions on Microwave Theory and Techniques · 2009 · 101 citations