Coexistence of weak localization and a metallic phase in Si/SiGe quantum wells

Abstract

Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal the coexistence of a metallic behavior and weak localization. Deep in the metallic regime, pronounced weak localization reduces the metallic behavior around zero magnetic field without destroying it. In the insulating phase, a positive magnetoresistivity emerges close to $B=0,$ possibly related to spin-orbit interactions.