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Measurement of the minority carrier mobility in the base of heterojunction bipolar transistors using a magnetotransport method
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1995
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Minority Carrier MobilityElectrical EngineeringEngineeringPhysicsNanoelectronicsElectronic EngineeringFlight TechniqueApplied PhysicsBias Temperature InstabilityHeterojunction Bipolar TransistorsMagnetotransport MethodCurrent FlowMicroelectronicsSemiconductor Device
The minority carrier mobility in the base of an InP/GaInAs heterojunction bipolar transistor (HBT) is obtained by measuring the change in base current induced by a magnetic field applied perpendicular to the direction of the current flow. The obtained mobility is consistent with results of the zero-field time of flight technique.