<i>I</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> growth of DyBa2Cu3O7−<i>x</i> thin films by molecular beam epitaxy

Abstract

Films of DyBa2Cu3O7−x with transition temperatures as high as 89 K and with nominal thicknesses down to 35 Å have been grown in situ using molecular beam epitaxy employing ozone as a source of reactive oxygen. The process has been successful with a variety of substrates including SrTiO3(100), SrTiO3(110), LaAlO3(100), MgO(100), and yttria-stabilized zirconia. The films could be imaged with a scanning tunneling microscope at 4.2 K, indicating a conducting surface even at low temperatures.