Exchange enhancement of the g factor in InAs/AlSb heterostructures

Abstract

The evolution of the Shubnikov-de Haas oscillations in InAs/AlSb heterostructures with twodimensional electron gas in InAs quantum wells 12–18 nm wide with considerable variation in the electron concentration (3–8) × 1011 cm−2 due to the effect of negative persistent photoconductivity is studied. The values of the effective Landé factor for electrons g* = −(15–35) are determined. It is shown that the value of the g* factor increases as the quantum well width increases.