Publication | Closed Access
Electron relaxation in a quantum dot: Significance of multiphonon processes
397
Citations
6
References
1992
Year
Quantum DynamicQuantum ScienceElectrical EngineeringLocalized Excited StateEngineeringPhotoluminescencePhysicsApplied PhysicsQuantum DotsPhononGaas Quantum DotRelaxation RateOptoelectronicsElectron RelaxationCompound Semiconductor
Electron relaxation in a GaAs quantum dot is investigated to second order in electron-phonon interactions. Calculation of relaxation rate, as a function of level separation, indicates the significant contribution of LO\ifmmode\pm\else\textpm\fi{}LA processes, which create a window of rapid (subnanosecond) relaxation around the longitudinal-optical phonon energy. This result may provide a possible solution to the problem of photoluminescence degradation in small quantum dots.
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