Theory of Negative Magnetoresistance I. Application to Heavily Doped Semiconductors

Abstract

Theory of negative magnetoresistance proposed recently by the author is presented in details and is applied to heavily doped semiconductors. Experiments on n-type GaAs are semi-quantitatively explained. The theory is extended to the case of anisotropic systems and is applied to Ge and Si. Quantitative agreements with experiment are obtained on the anisotropy of magnetoresistance Δ ρ in Ge. Square root dependence of Δ ρ out the magnitude of the magnetic field observed in Ge agrees with the prediction of the theory. As for the magnitude of Δ ρ in Ge and Si, discrepancies between the theory and experiments are rather large.