Dielectric breakdown in Co–Fe–B/MgO/Co–Fe–B magnetic tunnel junction

Abstract

The time-dependent dielectric breakdown has been investigated in Co–Fe–B/MgO/Co–Fe–B junctions by voltage ramp experiments and focused on its dependence on the barrier thickness, junction area, polarity of the applied voltage, ramp speed, and annealing temperature. The results suggest that the breakdown voltage strongly depends both on the polarity of the applied voltage and the annealing temperature. Magnetic tunnel junctions (MTJs) with positive bias on the top electrode show higher breakdown voltage than MTJs with negative bias. We found that there is a significant decrease in the breakdown voltage when the annealing temperature is increased above 350 °C.