Chemical Vapor Deposition of Molybdenum Silicide

Abstract

A cold‐wall reactor has been used to deposit molybdenum silicide films from a mixture of and . The composition of the resulting films can be controlled by the deposition temperature, and stoichiometry is obtained with a substrate temperature of 200°C. The film composition is independent of reactant gas ratios in the range of 1–10. The as‐deposited films are generally amorphous as determined by x‐ray analysis. Annealing at 950°C in argon converts the films to tetragonal polycrystalline .