A 10-b 150-MSample/s 1.8-V 123-mW CMOS A/D converter with 400-MHz input bandwidth

Abstract

This work describes a 10-b 150-MSample/s 4-b-per-stage single-channel CMOS pipelined ADC incorporating improved gate-bootstrapping techniques for a wideband SHA and temperature- and supply-insensitive CMOS references. The proposed ADC is designed and fabricated in a 0.18-/spl mu/m one-poly six-metal CMOS technology. The measured differential and integral nonlinearities are within 0.69 LSB and 1.50 LSB, respectively. The prototype ADC shows a peak signal-to-noise-and-distortion ratio (SNDR) of 52 dB at 150 MSample/s. The ADC maintains the SNDR over 52 dB and 43 dB, respectively, for input frequencies up to the Nyquist frequency and 400 MHz at 140 MSample/s. The active die area is 2.2 mm/sup 2/ and the chip consumes 123 mW at 150 MSample/s.