Interface structure of fcc Mn on GaAs(001)

Abstract

Temperature dependent growth of Mn on GaAs(001) and their interface structure have been studied. At 400 K, fcc Mn grows epitaxially on GaAs and a “Mn2As-type” Mn–Ga–As mixed layer sandwiched between the fcc Mn and GaAs(001) is observed. It is this transition layer that plays a critical role in the stabilization of the metastable fcc-Mn-phase on GaAs(001).