Second-Order Piezoresistance Coefficients of p-Type Silicon

Abstract

Nonlinear piezoresistance effects in p -type Si resistors of three surface impurity concentrations were measured at room temperature. Stresses up to 174 MPa were applied along the <110 > and <111 > directions by bending a silicon cantilever. We determined all of the second-order piezoresistance tensor components, assuming that resistivity is more sensitive to shear than dilation, and that the hydrostatic pressure coefficient is zero.