Publication | Closed Access
Theoretical calculations of Debye length, built-in potential and depletion layer width versus dopant density in a heavily doped p-n junction diode
24
Citations
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References
1985
Year
Electrical EngineeringSemiconductor DeviceEngineeringPhysicsP-n Junction DiodeNanoelectronicsApplied PhysicsDebye LengthMicroelectronicsOptoelectronicsCategoryiii-v SemiconductorCompound SemiconductorVersus Dopant Density
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