Theoretical calculations of Debye length, built-in potential and depletion layer width versus dopant density in a heavily doped p-n junction diode

Band-gap narrowing in heavily doped many-valley semiconductors

Karl‐Fredrik Berggren, Bo E. Sernelius · Physical review. B, Condensed matter · 1981 · 488 citations

Natural Sciences, Materials Science, Physics +16

Approximations for Fermi-Dirac integrals, especially the function used to describe electron density in a semiconductor

J. S. Blakemore · Solid-State Electronics · 1982 · 328 citations

Natural Sciences, Materials Science, Physics +14

Dielectric Anomaly and the Metal-Insulator Transition in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Silicon

T. G. Castner, N. K. Lee, G. S. Cieloszyk et al. · Physical Review Letters · 1975 · 190 citations

Natural Sciences, Materials Science, Physics +17

Transition region capacitance of diffused p-n junctions

B.R. Chawla, H.K. Gummel · IEEE Transactions on Electron Devices · 1971 · 116 citations

Engineering, Electrical Engineering, Materials Science +17

Empirical approximations for the Fermi energy in a semiconductor with parabolic bands

N.G. Nilsson · Applied Physics Letters · 1978 · 89 citations

Natural Sciences, Materials Science, Condensed Matter Physics +16