Deep-level emissions influenced by O and Zn implantations in ZnO

Abstract

A set of bulk ZnO samples implanted with O and Zn at various densities were investigated by photoluminescence. The implantation concentration of O and Zn is varied between 1×1017∕cm3 and 5×1019∕cm3. The samples were thermally treated in an oxygen gas environment after the implantation. The results clearly show the influence of O and Zn implantations on the deep-level emission. By comparing the photoluminescence spectra for the samples with different implantations, we can conclude that the VZn is responsible to the observed deep-level emission. In addition, a novel transition at the emission energy of 3.08eV at 77K appears in the O-implanted sample with 5×1019∕cm3 implantation concentration. The novel emission is tentatively identified as O-antisite OZn.