<i>p</i>-type conduction in codoped ZnO thin films

Abstract

p-type conduction in ZnO thin films was realized by the codoping method. Types of conduction and carrier density in codoped ZnO films were found to be dependent on the oxygen partial pressure ratios in the sputtering gas mixture. The lowest room temperature resistivity was found to be 11.77 Ω cm with a hole density of 9.0×1016 cm−3 for the films deposited in 60% of oxygen partial pressure ratio. Codoped films were found to be c-oriented and highly transparent.