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Relation between Growth Temperature and the Structure of SiC Crystals Grown by Sublimation Method
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1968
Year
EngineeringSic Crystals GrownStructural MaterialsLow Supersaturation.the ResultsSublimation MethodCeramic TechnologyThermal StabilityMaterials EngineeringMaterials ScienceSic CrystalsCrystalline DefectsCeramic MaterialCarbon MaterialsStructural CeramicMicrostructureHigh Temperature MaterialsGrowth TemperatureApplied PhysicsCarbideThermal Properties
The relationship between the growth temperature and the polytype of SiC crystals has been studied experimentally in the range from 2200°C to 2600°C at the condition of low supersaturation.The results are summarized as follows;1) In all region of the present experiments, excluding one example in which 4 H-type was involved, the structure of all crystals consisted of 6H-, 15R- and other long c-period types exceeding 21. Among the elemental structures of SiC, 2H, 3C, 4H, 15R, 6H, and 21 R, only the 6H and 15R were found.2) From the results stated in 1), it was concluded that in the range of 2200°-2600°C, 6H and 15R have the most thermal stability among the structures considered as elemental. In this conclusion, however, the effect of impurity in the crystal and the shift from the stoichiometry were neglected.3) The relative amount of 15R increased with decreasing temperature; 6H showed an opposite tendency.