A 3–20 GHz SiGe HBT ultra-wideband LNA with gain and return loss control for multiband wireless applications

Abstract

We present an ultra-wideband, Low Noise Amplifier (LNA) implemented in Silicon-Germanium Heterojunction Bipolar Transistor (SiGe HBT) technology. This SiGe LNA is broadband, covering the frequency range of 3-20 GHz, and achieves a peak gain of 21.3 dB. The SiGe LNA exhibits a Noise Figure (NF) of 4.2-5.2 dB across an 8-18 GHz band and consumes 35.2 mA from a 3.3 V supply.