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Optically detected far-infrared resonances in doped GaAs quantum wells
42
Citations
8
References
1995
Year
Categoryquantum ElectronicsEngineeringExcitation Energy TransferOptoelectronic DevicesFar-infrared ResonancesSemiconductor NanostructuresSemiconductorsQuantum MaterialsImpurity StatesNanophotonicsPhotonicsQuantum SciencePhotoluminescencePhysicsQuantum DeviceOptoelectronic MaterialsOptoelectronicsApplied PhysicsQuantum Photonic DeviceGround State
We have observed a variety of far-infrared resonances, including the transition from the ground state to the first excited state in neutral donors, and singlet and triplet transitions of negative donor ions (${\mathit{D}}^{\mathrm{\ensuremath{-}}}$), as well as electron-cyclotron resonance, in well-center-doped GaAs quantum wells, employing a recently developed optical detection technique. The power of this technique for studying impurity states in confined systems is clearly revealed. Results provide evidence for the existence of ${\mathit{D}}^{\mathrm{\ensuremath{-}}}$ centers under optical excitation in multiple-quantum-well structures doped only in the wells.
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