Growth of Stannic Oxide Crystals from the Vapor Phase

Abstract

Single crystals of stannic oxide up to 30×4×2 mm have been prepared by a high temperature vapor deposition technique. Using high purity SnO2 powder, crystallization and growth were studied under both neutral and oxidizing conditions. Neutral carrier gases, with the exception of helium, encouraged the formation of voids and inclusions. However, the use of a helium-oxygen system was found to eliminate these defects. An explanation is offered for this behavior. Three distinct variations in the crystalline habit of SnO2 have been observed, apparently dependent upon the temperature at which growth occurred.