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The influence of implanted ions on the superconducting transition temperature of transition metals and transition metal carbides
22
Citations
2
References
1977
Year
Materials ScienceSuperconducting MaterialIon ImplantationEngineeringPhysicsTransition MetalsApplied PhysicsSuperconductivityCondensed Matter PhysicsTransition Metal CarbidesMolybdenum LayersAl ImplantsChemical KineticsAlloy PhaseImplanted IonsCarbideIon Process
The implantation of several different ions into transition metals and transition metal carbides leads to a strong variation of T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> . In molybdenum layers, T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> was found to increase after implantation of B, C, N, P, As and S ions up to a maximum value of 9.4 K at concentrations of about 25 at. %. No T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> increase has been observed for Ne, Xe and Al implants. Structure determination, resistivity measurements and additional channeling measurements on implanted Mo single crystals indicate that the T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> -enhancement is due to a strongly distorted host lattice. Systematic studies have also been performed for other transition metals. Single crystals of NbC <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.89</inf> and VC <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.88</inf> have been implanted with carbon ions at different temperatures. For NbC T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> increased from 3 to 7 K after implantation at RT and reached a maximum of 11.5 K after annealing at 1100°C. VC was found to become superconducting at about 3.2 K after implantation of carbon ions into the single crystal at 700° C. Backscattering measurements showed an improvement in the stoichiometry of the implanted regions; channeling spectra revealed that radiation damage was not completely annealed in the hot VC implants.
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