Mechanisms of energy dissipation during displacement- sensitive indentation in Ge single crystals at elevated temperatures

Abstract

Abstract Load-displacement indentation tests have been performed in Ge single crystals on a newly designed displacement-sensitive hardness tester in the temperature range 20–450°C. The deformation substructure in the vicinity of the indentation impressions was investigated using selective etching. The energy dissipated during the loading-unloading indentation cycle has been measured and compared with the extent and the structure of the deformation zone. Mechanisms of plastic flow and fracture during indentation are discussed.