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Silicon excess and thermal annealing effects on the photoluminescence of SiO2 and silicon rich oxide super enriched with siliscon implantation

DOI

19

Citations

0

References

2004

Year

D. Berman, M. Aceves, A. Gallegos, A. Morales–Sánchez, L. R. Berriel, J. Carrillo, Fredy Roger Flores Flores, C. Falcony, Andreu Llobera, M. Riera,
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

Abstract

The off-stoichiometry silicon oxide SiOx (x < 2), known as silicon-rich oxide (SRO), and silicon-implanted thermal silicon oxide (SITO) have shown poor photoluminescence (PL) at room temperature. Recently, many efforts to increase the PL in these materials have been made. In our experiments, a considerable increase of the visible emission has been observed when the SRO is super-enriched by silicon implantation. In this experiment, SITO and LPCVD-SRO with different silicon excess, Si implanted and no implant were studied. Different doses of silicon, and annealing in N2 at different temperature and times were used. PL response was measured before and after annealing. The emission is explained as the decay between traps in the oxide gap. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)