27.2: Poly‐Si Thin‐Film Transistors Using Polysilazane‐Based Spin‐On Glass for All Dielectric Layers

Abstract

Abstract Polycrystalline silicon thin‐film transistors (poly‐Si TFTs) with all layers of dielectric made from polysilazane‐based spin‐on glass (PS‐SOG) have been developed for the first time. The maximum annealing temperature of the PS‐SOG was at 400 °C. The electrical characteristics of poly‐Si TFTs with PS‐SOG as a gate dielectric are stable and the gate leakage current is sufficiently low. PS‐SOG is expected to realize CVD‐free deposition of dielectric layers and remarkable cost reduction of poly‐Si TFTs.