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Triple-stripe phase-locked diode lasers emitting 100 mw CW with single-lobed far-field patterns
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1985
Year
PhotonicsMw CwEngineeringRefractive IndexOptical Transmission SystemOptical PropertiesLaser ScienceLaser ApplicationsInner Stripe ConfigurationLaser MaterialGuided-wave OpticAlgaas Laser ArraysHigh-power LasersSingle-lobed Far-field PatternsElectro-optics DeviceOptoelectronics
AlGaAs laser arrays with inner stripe configuration have been developed. Transverse mode control was accomplished by introducing nonuniform refractive index and gain distributions, which are built in utilising growth features of liquid-phase epitaxy. The maximum light outputs are 130 mW and 400 mW in CW and pulsed operation, respectively.
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