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Performance improvements of AlGaN/GaN HEMTs by strain modification and unintentional carbon incorporation

Materials EngineeringMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceStrain ModificationAlgan/gan HemtsCategoryiii-v SemiconductorUnintentional Carbon Incorporation