2013 · 10 citations · 14 references
EngineeringAerospace EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave Device SimulationMicrowave Integrated CircuitsMicrowave MeasurementsMicrowave Semiconductor DevicesMillimeter-wave CommunicationsGaas Microwave Integrated CircuitsGaas Monolithic Microwave Integrated CircuitsHigh-electron-mobility TransistorsLoad ResistanceMicrowave DevicesMicrowave RectifiersRectifier CircuitsWireless Communication Systems
This paper demonstrates fundamental evaluation results of a C-band rectifier using GaAs high-electron mobility transistor (HEMT) for microwave power transfer (MPT) inside of future reusable rockets. Rectifiers which utilize HEMT MMICs with hot-via interconnection structure are feasible solution to integrate with conventional wireless communication MMICs or sensor tags for low cost, light weight, and small components for space health monitoring system. Simulation of large signal S-parameters, measurement of rectification efficiency are conducted as a fundamental evaluation. Maximum rectification efficiency of 51.3 % at 5.1 GHz while the load resistance is 350 Ω is obtained from the measurement.
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