Bound-free intraband absorption in GaAs-Al<i>x</i>Ga1−<i>x</i>As semiconductor quantum wells

Abstract

The spectral characteristics of intraband absorption on bound-free transitions in semiconductor quantum wells are analyzed. Numerical results indicate that both comparatively narrowband (∼30 meV) and broadband (≳200 meV) absorption may occur, which may be important in infrared detector design.