Bound-free intraband absorption in GaAs-Al<i>x</i>Ga1−<i>x</i>As semiconductor quantum wells

Z. Ikonić, V. Milanović, D. Tjapkin

Applied Physics Letters · 1989 · 40 citations · 3 references

Concepts

Abstract

The spectral characteristics of intraband absorption on bound-free transitions in semiconductor quantum wells are analyzed. Numerical results indicate that both comparatively narrowband (∼30 meV) and broadband (≳200 meV) absorption may occur, which may be important in infrared detector design.

References

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