Nano Letters · 2009 · 90 citations · 21 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsNanomaterialsSemiconductor MaterialsDopingIii-v SemiconductorsNanowiresSemiconductor HeterostructuresSemiconductor NanomaterialsSemiconductor PhysicsHeterostructured NanowiresHeterostructuresInterface DiffusionInterface-controlled GrowthNanowire HeterojunctionsScanning Transmission Electron MicroscopySemiconductor NanowiresVolume Diffusion
We present an investigation of the morphology and composition of novel types of axial nanowire heterostructures where Ga(x)In(1-x)As is used as barrier material in InAs nanowires. Using aberration-corrected scanning transmission electron microscopy and energy dispersive X-ray analysis we demonstrate that it is possible to grow junctions by changing the group III elements, and we find that a substantial fraction of Ga can be incorporated in axial InAs/Ga(x)In(1-x)As/InAs, retaining straight nanowire configurations. We explain how the adatoms are transferred to the incorporation site at the growth interface via two different routes, (1) interface diffusion and (2) volume diffusion through the catalyst particle.
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