PROPERTIES OF ZnO:AL THIN FILMS, OBTAINED BY THE SOL-GEL METHOD

Abstract

Al-doped ZnO thin films have been prepared by the sol-gel technique, on slide-glass substrates. Al(NO 3 ) 3 ·9H 2 O was used as aluminum source and the doping range was 0.001-20 at %. The effect of the Al concentration in solution on the microstructure of the films is presented. The transmittance spectra, as well as the sheet resistance measurements, show the presence of electrically-active aluminum in the films.