Publication | Closed Access
GdN (111) heteroepitaxy on GaN (0001) by N2 plasma and NH3 molecular beam epitaxy
81
Citations
26
References
2009
Year
Materials EngineeringMaterials ScienceWide-bandgap SemiconductorEngineeringPhysicsApplied PhysicsGan Power DeviceN2 Plasma
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