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High Electric Field Effects in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Indium Antimonide
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1958
Year
Math XmlnsElectrical EngineeringEngineeringPhysicsElectron SpectroscopySingle CrystalHall Effect MeasurementsGlow DischargeApplied PhysicsElectric FieldsCurrent-voltage MeasurementsGas Discharge PlasmaElectrical PropertyElectrical Insulation
Pulsed current-voltage measurements have been made on a single crystal of n-InSb at 77 deg K up to a current density of 10/sup 4/ amp/cm/sup 2-/ In order to avoid heating, the data were taken with 1 mu sec pulses at a repetition rate of 1 cps. Beyond about 2 x 10/sup 3/ amp/cm/sup 2/ the current increased rapidly for small increases in voltage. The electric fleld at the threshold was about 200 volts/ cm for no applied magnetic fleld. Hall effect measurements at 7000 oersteds showed that the initial carrier concentration of about 2 x 10/sup 14/cm/sup -3/ was increased by a factor of ten in going from the onset of the rapid current increase to the highest current attained. The results are tabulated. (A.C.)