LaAlO[sub 3] Nanocrystals Embedded in Amorphous Lu[sub 2]O[sub 3] High-k Gate Dielectric for Floating Gate Memory Application

Abstract

A novel method to fabricate the memory structure of LaAlO 3 nanocrystals embedded in amorphous Lu 2 O 3 high-k dielectric by the pulsed laser deposition method using a rotating target was successfully developed. The average mean size and aerial density of the LaAlO 3 nanocrystals are estimated to be about 6 nm and 1.1 10 12 cm -2 , respectively. Superior performances in terms of a large memory window, long data retention, and robust endurance were observed.