Publication | Open Access
Material parameters of quaternary III - V semiconductors for multilayer mirrors at wavelength
97
Citations
19
References
1996
Year
Quaternary IiiOptical MaterialsEngineeringAlloy Systems AlgaassbCommon Ingaasp SystemSemiconductorsIi-vi SemiconductorOptical PropertiesCompound SemiconductorGraded-reflectivity MirrorsMaterial ParametersMaterials SciencePhotonicsPhysicsMultilayer MirrorsNine QuaternarySemiconductor MaterialOptical CeramicDepth-graded Multilayer CoatingApplied PhysicsMultilayer HeterostructuresOptoelectronics
Nine quaternary (Al,Ga,In) - (P,As,Sb) semiconductor compounds lattice matched to InP are investigated theoretically. Direct bandgap, refractive index at wavelength, and thermal conductivity are calculated as a function of the composition. These material properties are important, e.g. in distributed Bragg reflectors of vertical-cavity lasers. The alloy systems AlGaAsSb, AlGaPSb and GaInPSb are found to promise better performance of those mirrors than the common InGaAsP system.
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