Applied Physics Letters · 1974 · 37 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesLuminescent MaterialsOptoelectronic DevicesOptoelectronic MaterialsP-n JunctionsWide Band Gap SemiconductorsForward Bias CharacteristicsLight-emitting DevicesLiquid Phase EpitaxyP-n Junction CharacteristicsQuantum EfficiencyQuantum Efficiency MeasurementTunnel Junctions
Thermally stimulated current (TSC) measurements have been performed on p-n junctions in GaP grown by double liquid phase epitaxy. Several deep states have been observed in both the n and p sides of the junction, and a correlation has been established between the presence and concentration of some of these traps and the quantum efficiency of the corresponding light-emitting diode (LED). It has also been observed that the degradation of the LED by heating under forward bias leads to the appearance or increase of the intensity of some peaks in the TSC spectrum.
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