Fast and low-temperature reduction of graphene oxide films using ammonia plasma

Abstract

Reduced graphene oxide (rGO) has been produced using an ammonia (NH3) plasma reduction method. Simultaneous nitrogen doping during the reduction process enabled a rapid and low-temperature restoration of the electrical properties of the rGO. The chemical, structural, and electrical properties of the rGO films were analyzed using x-ray photoelectron spectroscopy, Raman spectroscopy, atomic force microscopy, and conductivity measurements. The oxygen functional groups were efficiently removed, and simultaneous nitrogen doping (6%) was carried out. In addition, the surface of the rGO film was flattened. Consequently, the rGO films exhibited electrical properties comparable to those prepared via other reduction methods.