Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

TLDR

The study aims to develop a simple titanium oxide bilayer resistive switching device that emulates synaptic functions, integrating memory, computing, and environmental adaptation in a solid‑state platform. The authors analyze spike‑timing‑dependent plasticity and a biological triple‑model to demonstrate the device’s potential as a neuromorphic synapse. The device shows analog memory, multilevel conductance, and STDP behavior with good yield uniformity, confirming synapse‑like memory and computing capabilities.

Abstract

We demonstrated analog memory, synaptic plasticity, and a spike-timing-dependent plasticity (STDP) function with a nanoscale titanium oxide bilayer resistive switching device with a simple fabrication process and good yield uniformity. We confirmed the multilevel conductance and analog memory characteristics as well as the uniformity and separated states for the accuracy of conductance change. Finally, STDP and a biological triple model were analyzed to demonstrate the potential of titanium oxide bilayer resistive switching device as synapses in neuromorphic devices. By developing a simple resistive switching device that can emulate a synaptic function, the unique characteristics of synapses in the brain, e.g. combined memory and computing in one synapse and adaptation to the outside environment, were successfully demonstrated in a solid state device.