Thin Film Growth of YBa₂Cu₃O_7-x by ECR Oxygen Plasma Assisted Reactive Evaporation

Abstract

A new apparatus equipped with an ECR oxygen plasma source, a co-evaporation system of Y, Ba and Cu and a differential pumping system was developed. YBa 2 Cu 3 O 7- x superconducting films were obtained at a substrate temperature of 450–500°C. The critical temperatures of films deposited on SrTiO 3 , MgO and Si substrates were 87 K, 80 K and 63 K, respectively. These properties were closely related to the crystallinity of the film.