Applied Physics Letters · 1997 · 74 citations · 4 references
EngineeringMaterials EngineeringMaterials ScienceInterface ScienceSurface ChemistrySurface ScienceIon ImplantationSemiconductor SurfacesSilicon MaterialsSurface KineticsSurface ModificationSurface PhysicsHydrogen EffectsHydrogen Evolution KineticsInternal PressureInternal Pressure ProfilesSecondary Ion Mass SpectrometrySilicon ChemistrySilicon Surface ScienceThreshold Dose Concept
Physical mechanisms of hydrogen induced silicon surface layer cleavage were investigated using a combination of microscopy and spectroscopy techniques. The evolution of the silicon cleavage phenomenon is recorded by a series of microscopic images. The underlying hydrogen profiles under (between 250 and 500 °C) annealing are characterized by secondary-ion-mass spectroscopy and hydrogen forward scattering experiments. An idea gas law model calculation suggests that internal pressure of molecular hydrogen filled microcavities is in the range of Giga-Pascal, high enough to break silicon crystal bond. A dose threshold, which prevents cleavage, is observed at 1.6×1017 cm−2 for 40 kV hydrogen implantation.
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